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IXGH30N60C3

IXGH30N60C3

For Reference Only

Part Number IXGH30N60C3
PNEDA Part # IXGH30N60C3
Description IGBT 600V 60A 220W TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,652
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGH30N60C3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGH30N60C3
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGH30N60C3, IXGH30N60C3 Datasheet (Total Pages: 6, Size: 275.05 KB)
PDFIXGH30N60C3 Datasheet Cover
IXGH30N60C3 Datasheet Page 2 IXGH30N60C3 Datasheet Page 3 IXGH30N60C3 Datasheet Page 4 IXGH30N60C3 Datasheet Page 5 IXGH30N60C3 Datasheet Page 6

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IXGH30N60C3 Specifications

ManufacturerIXYS
SeriesGenX3™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)150A
Vce(on) (Max) @ Vge, Ic3V @ 15V, 20A
Power - Max220W
Switching Energy270µJ (on), 90µJ (off)
Input TypeStandard
Gate Charge38nC
Td (on/off) @ 25°C16ns/42ns
Test Condition300V, 20A, 5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXGH)

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

3.8V @ 15V, 15A

Power - Max

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Switching Energy

1.05mJ (off)

Input Type

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Gate Charge

86nC

Td (on/off) @ 25°C

25ns/150ns

Test Condition

960V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 12A

Power - Max

100W

Switching Energy

160µJ (on), 200µJ (off)

Input Type

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Gate Charge

50nC

Td (on/off) @ 25°C

17ns/78ns

Test Condition

480V, 12A, 23Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

TO-247AC

Manufacturer

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Series

BIMOSFET™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

417W

Switching Energy

23mJ (on), 2.6mJ (off)

Input Type

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Gate Charge

425nC

Td (on/off) @ 25°C

33ns/370ns

Test Condition

1500V, 20A, 3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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IXSH40N60B

IXYS

Manufacturer

IXYS

Series

-

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 40A

Power - Max

280W

Switching Energy

1.8mJ (off)

Input Type

Standard

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190nC

Td (on/off) @ 25°C

50ns/110ns

Test Condition

480V, 40A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXSH)

STGWT60H65DFB

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

240A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 60A

Power - Max

375W

Switching Energy

1.09mJ (on), 626µJ (off)

Input Type

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Gate Charge

306nC

Td (on/off) @ 25°C

51ns/160ns

Test Condition

400V, 60A, 5Ohm, 15V

Reverse Recovery Time (trr)

60ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

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