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STGWT60H65DFB

STGWT60H65DFB

For Reference Only

Part Number STGWT60H65DFB
PNEDA Part # STGWT60H65DFB
Description IGBT 650V 80A 375W TO3P-3L
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,252
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGWT60H65DFB Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGWT60H65DFB
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGWT60H65DFB, STGWT60H65DFB Datasheet (Total Pages: 19, Size: 1,574.09 KB)
PDFSTGW60H65DFB Datasheet Cover
STGW60H65DFB Datasheet Page 2 STGW60H65DFB Datasheet Page 3 STGW60H65DFB Datasheet Page 4 STGW60H65DFB Datasheet Page 5 STGW60H65DFB Datasheet Page 6 STGW60H65DFB Datasheet Page 7 STGW60H65DFB Datasheet Page 8 STGW60H65DFB Datasheet Page 9 STGW60H65DFB Datasheet Page 10 STGW60H65DFB Datasheet Page 11

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STGWT60H65DFB Specifications

ManufacturerSTMicroelectronics
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)240A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 60A
Power - Max375W
Switching Energy1.09mJ (on), 626µJ (off)
Input TypeStandard
Gate Charge306nC
Td (on/off) @ 25°C51ns/160ns
Test Condition400V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr)60ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

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Input Type

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Gate Charge

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Operating Temperature

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Mounting Type

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Alpha & Omega Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

30A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

180µJ (on), 130µJ (off)

Input Type

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Gate Charge

24nC

Td (on/off) @ 25°C

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Test Condition

400V, 10A, 30Ohm, 15V

Reverse Recovery Time (trr)

262ns

Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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ON Semiconductor

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Series

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

250nC

Td (on/off) @ 25°C

26ns/138ns

Test Condition

400V, 75A, 3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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Manufacturer

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Series

Lightspeed™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1000V

Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

850µJ (off)

Input Type

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Gate Charge

73nC

Td (on/off) @ 25°C

25ns/150ns

Test Condition

960V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263 (IXGA)

RGW80TS65GC11

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

78A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 40A

Power - Max

214W

Switching Energy

760µJ (on), 720µJ (off)

Input Type

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Gate Charge

110nC

Td (on/off) @ 25°C

44ns/143ns

Test Condition

400V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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