IKW75N60H3FKSA1
For Reference Only
| Part Number | IKW75N60H3FKSA1 |
| PNEDA Part # | IKW75N60H3FKSA1 |
| Description | IGBT 600V 80A 428W TO247-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,936 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IKW75N60H3FKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IKW75N60H3FKSA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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IKW75N60H3FKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | TrenchStop® |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 80A |
| Current - Collector Pulsed (Icm) | 225A |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 75A |
| Power - Max | 428W |
| Switching Energy | 3mJ (on), 1.7mJ (off) |
| Input Type | Standard |
| Gate Charge | 470nC |
| Td (on/off) @ 25°C | 31ns/265ns |
| Test Condition | 400V, 75A, 5.2Ohm, 15V |
| Reverse Recovery Time (trr) | 190ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3 |
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Manufacturer ON Semiconductor Series Automotive, AEC-Q101, EcoSPARK® IGBT Type - Voltage - Collector Emitter Breakdown (Max) 360V Current - Collector (Ic) (Max) 44A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 1.4V @ 4V, 6A Power - Max 187W Switching Energy - Input Type Logic Gate Charge 20nC Td (on/off) @ 25°C -/5.4µs Test Condition 300V, 1kOhm, 5V Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263 |
Manufacturer IXYS Series BIMOSFET™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1600V Current - Collector (Ic) (Max) 5.7A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 7.2V @ 15V, 3A Power - Max 68W Switching Energy - Input Type Standard Gate Charge 26nC Td (on/off) @ 25°C - Test Condition 960V, 3A, 47Ohm, 10V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
