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IXGH25N100

IXGH25N100

For Reference Only

Part Number IXGH25N100
PNEDA Part # IXGH25N100
Description IGBT 1000V 50A 200W TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,290
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGH25N100 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGH25N100
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGH25N100, IXGH25N100 Datasheet (Total Pages: 4, Size: 601.26 KB)
PDFIXGM25N100A Datasheet Cover
IXGM25N100A Datasheet Page 2 IXGM25N100A Datasheet Page 3 IXGM25N100A Datasheet Page 4

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IXGH25N100 Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1000V
Current - Collector (Ic) (Max)50A
Current - Collector Pulsed (Icm)100A
Vce(on) (Max) @ Vge, Ic3.5V @ 15V, 25A
Power - Max200W
Switching Energy5mJ (off)
Input TypeStandard
Gate Charge130nC
Td (on/off) @ 25°C100ns/500ns
Test Condition800V, 25A, 33Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXGH)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

600µJ (off)

Input Type

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Gate Charge

234nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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