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IXGT6N170

IXGT6N170

For Reference Only

Part Number IXGT6N170
PNEDA Part # IXGT6N170
Description IGBT 1700V 12A 75W TO268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,676
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 19 - Feb 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGT6N170 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGT6N170
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGT6N170, IXGT6N170 Datasheet (Total Pages: 4, Size: 171.88 KB)
PDFIXGH6N170 Datasheet Cover
IXGH6N170 Datasheet Page 2 IXGH6N170 Datasheet Page 3 IXGH6N170 Datasheet Page 4

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IXGT6N170 Specifications

ManufacturerIXYS
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)12A
Current - Collector Pulsed (Icm)24A
Vce(on) (Max) @ Vge, Ic4V @ 15V, 6A
Power - Max75W
Switching Energy1.5mJ (off)
Input TypeStandard
Gate Charge20nC
Td (on/off) @ 25°C40ns/250ns
Test Condition1360V, 6A, 33Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageTO-268

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

1200A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

2.7mJ (on), 3.5mJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

480V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

4.3V @ 15V, 5A

Power - Max

60W

Switching Energy

450µJ (on), 440µJ (off)

Input Type

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Gate Charge

28nC

Td (on/off) @ 25°C

23ns/93ns

Test Condition

960V, 5A, 50Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

46nC

Td (on/off) @ 25°C

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Test Condition

196V, 12A, 10Ohm

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 100A

Power - Max

-

Switching Energy

-

Input Type

Standard

Gate Charge

600nC

Td (on/off) @ 25°C

100ns/230ns

Test Condition

600V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die

IRG4BC20UPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

13A

Current - Collector Pulsed (Icm)

52A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 6.5A

Power - Max

60W

Switching Energy

100µJ (on), 120µJ (off)

Input Type

Standard

Gate Charge

27nC

Td (on/off) @ 25°C

21ns/86ns

Test Condition

480V, 6.5A, 50Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

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