Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFV36N50P

IXFV36N50P

For Reference Only

Part Number IXFV36N50P
PNEDA Part # IXFV36N50P
Description MOSFET N-CH 500V 36A PLUS220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,446
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFV36N50P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFV36N50P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFV36N50P, IXFV36N50P Datasheet (Total Pages: 6, Size: 212.04 KB)
PDFIXFV36N50PS Datasheet Cover
IXFV36N50PS Datasheet Page 2 IXFV36N50PS Datasheet Page 3 IXFV36N50PS Datasheet Page 4 IXFV36N50PS Datasheet Page 5 IXFV36N50PS Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFV36N50P Datasheet
  • where to find IXFV36N50P
  • IXYS

  • IXYS IXFV36N50P
  • IXFV36N50P PDF Datasheet
  • IXFV36N50P Stock

  • IXFV36N50P Pinout
  • Datasheet IXFV36N50P
  • IXFV36N50P Supplier

  • IXYS Distributor
  • IXFV36N50P Price
  • IXFV36N50P Distributor

IXFV36N50P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs170mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs93nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds5500pF @ 25V
FET Feature-
Power Dissipation (Max)540W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS220
Package / CaseTO-220-3, Short Tab

The Products You May Be Interested In

DMN4800LSSL-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.7nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

798pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.46W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

UPA2766T1A-E2-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

130A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.82mOhm @ 39A, 4.5V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

257nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10850pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta), 83W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HVSON (5.4x5.15)

Package / Case

8-PowerVDFN

STD20NF10T4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

45mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

85W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRF1324S-7PPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

24V

Current - Continuous Drain (Id) @ 25°C

240A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1mOhm @ 160A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

252nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7700pF @ 19V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK (7-Lead)

Package / Case

TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

IPP50R380CEXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

9.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

13V

Rds On (Max) @ Id, Vgs

380mOhm @ 3.2A, 13V

Vgs(th) (Max) @ Id

3.5V @ 260µA

Gate Charge (Qg) (Max) @ Vgs

24.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

584pF @ 100V

FET Feature

Super Junction

Power Dissipation (Max)

73W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

Recently Sold

7443556350

7443556350

Wurth Electronics

FIXED IND 3.5UH 22.5A 3.1 MOHM

EPM1270F256C5N

EPM1270F256C5N

Intel

IC CPLD 980MC 6.2NS 256FBGA

SMBJ18CA-E3/52

SMBJ18CA-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 18V 29.2V DO214AA

DS3232SN#T&R

DS3232SN#T&R

Maxim Integrated

IC RTC CLK/CALENDAR I2C 20-SOIC

DS1230Y-150

DS1230Y-150

Maxim Integrated

IC NVSRAM 256K PARALLEL 28EDIP

H1102NL

H1102NL

Pulse Electronics Network

MODULE XFRMR SGL ETHR LAN 16SOIC

AK4480EF

AK4480EF

AKM Semiconductor Inc.

IC DAC/AUDIO 32BIT 216K 30VSOP

PIC18F63J11-I/PT

PIC18F63J11-I/PT

Microchip Technology

IC MCU 8BIT 8KB FLASH 64TQFP

ADG5419BRMZ

ADG5419BRMZ

Analog Devices

IC SWITCH SINGLE SPDT 8MSOP

SI2300DS-T1-GE3

SI2300DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 3.6A SOT-23

ADM1087AKSZ-REEL7

ADM1087AKSZ-REEL7

Analog Devices

IC SIMPLE SEQUENCER OD SC70-6

SE5534AN

SE5534AN

ON Semiconductor

IC OPAMP GP 1 CIRCUIT 8DIP