IPP50R380CEXKSA1
For Reference Only
| Part Number | IPP50R380CEXKSA1 |
| PNEDA Part # | IPP50R380CEXKSA1 |
| Description | MOSFET N CH 500V 9.9A PGTO220 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 22,218 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPP50R380CEXKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPP50R380CEXKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPP50R380CEXKSA1 Datasheet
- where to find IPP50R380CEXKSA1
- Infineon Technologies
- Infineon Technologies IPP50R380CEXKSA1
- IPP50R380CEXKSA1 PDF Datasheet
- IPP50R380CEXKSA1 Stock
- IPP50R380CEXKSA1 Pinout
- Datasheet IPP50R380CEXKSA1
- IPP50R380CEXKSA1 Supplier
- Infineon Technologies Distributor
- IPP50R380CEXKSA1 Price
- IPP50R380CEXKSA1 Distributor
IPP50R380CEXKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 3.2A, 13V |
| Vgs(th) (Max) @ Id | 3.5V @ 260µA |
| Gate Charge (Qg) (Max) @ Vgs | 24.8nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 584pF @ 100V |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 73W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |
The Products You May Be Interested In
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 50mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.9W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
Manufacturer ON Semiconductor Series - FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 125mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id 3.5V @ 960µA Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2127pF @ 100V FET Feature - Power Dissipation (Max) 34W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-FP Package / Case TO-220-3 Full Pack |
Manufacturer IXYS Series PolarHT™ HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 96A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 24mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V FET Feature - Power Dissipation (Max) 600W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS220 Package / Case TO-220-3, Short Tab |
Manufacturer Infineon Technologies Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
