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UPA2766T1A-E2-AY

UPA2766T1A-E2-AY

For Reference Only

Part Number UPA2766T1A-E2-AY
PNEDA Part # UPA2766T1A-E2-AY
Description MOSFET N-CH 30V 130A 8HVSON
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 8,046
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

UPA2766T1A-E2-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberUPA2766T1A-E2-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
UPA2766T1A-E2-AY, UPA2766T1A-E2-AY Datasheet (Total Pages: 7, Size: 143.38 KB)
PDFUPA2766T1A-E1-AY Datasheet Cover
UPA2766T1A-E1-AY Datasheet Page 2 UPA2766T1A-E1-AY Datasheet Page 3 UPA2766T1A-E1-AY Datasheet Page 4 UPA2766T1A-E1-AY Datasheet Page 5 UPA2766T1A-E1-AY Datasheet Page 6 UPA2766T1A-E1-AY Datasheet Page 7

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UPA2766T1A-E2-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.82mOhm @ 39A, 4.5V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs257nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10850pF @ 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 83W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HVSON (5.4x5.15)
Package / Case8-PowerVDFN

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