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IXFH6N100Q

IXFH6N100Q

For Reference Only

Part Number IXFH6N100Q
PNEDA Part # IXFH6N100Q
Description MOSFET N-CH 1000V 6A TO-247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,506
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH6N100Q Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH6N100Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH6N100Q, IXFH6N100Q Datasheet (Total Pages: 2, Size: 119.11 KB)
PDFIXFT6N100Q Datasheet Cover
IXFT6N100Q Datasheet Page 2

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IXFH6N100Q Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.9Ohm @ 3A, 10V
Vgs(th) (Max) @ Id4.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs48nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2200pF @ 25V
FET Feature-
Power Dissipation (Max)180W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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