Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STD25NF10T4

STD25NF10T4

For Reference Only

Part Number STD25NF10T4
PNEDA Part # STD25NF10T4
Description MOSFET N-CH 100V 25A DPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 105,054
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD25NF10T4 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD25NF10T4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STD25NF10T4 Datasheet
  • where to find STD25NF10T4
  • STMicroelectronics

  • STMicroelectronics STD25NF10T4
  • STD25NF10T4 PDF Datasheet
  • STD25NF10T4 Stock

  • STD25NF10T4 Pinout
  • Datasheet STD25NF10T4
  • STD25NF10T4 Supplier

  • STMicroelectronics Distributor
  • STD25NF10T4 Price
  • STD25NF10T4 Distributor

STD25NF10T4 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs38mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1550pF @ 25V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

NP75P03YDG-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

6.2mOhm @ 37.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

141nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4800pF @ 25V

FET Feature

-

Power Dissipation (Max)

1W (Ta), 138W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HSON

Package / Case

8-SMD, Flat Lead Exposed Pad

IPSA70R750P7SAKMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

700V

Current - Continuous Drain (Id) @ 25°C

6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 1.4A, 10V

Vgs(th) (Max) @ Id

3.5V @ 70µA

Gate Charge (Qg) (Max) @ Vgs

8.3nC @ 400V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

306pF @ 400V

FET Feature

-

Power Dissipation (Max)

34.7W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

MGSF1N03LT3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

100mOhm @ 1.2A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 5V

FET Feature

-

Power Dissipation (Max)

420mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

FQU7P20TU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

5.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

690mOhm @ 2.85A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

770pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 55W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

STP2NK60Z

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8Ohm @ 700mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

170pF @ 25V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

LPC1788FBD208,551

LPC1788FBD208,551

NXP

IC MCU 32BIT 512KB FLASH 208LQFP

EDF1DS-E3/77

EDF1DS-E3/77

Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 200V 1A DFS

TAJD686K016RNJ

TAJD686K016RNJ

CAP TANT 68UF 10% 16V 2917

MCP73833-FCI/UN

MCP73833-FCI/UN

Microchip Technology

IC LI-ION/LI-POLY CTRLR 10MSOP

IS42S16160G-7BLI-TR

IS42S16160G-7BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 54TFBGA

MC33990D

MC33990D

NXP

IC TRANSCEIVER HALF 1/1 8SOIC

APE30024

APE30024

Panasonic Electric Works

RELAY GEN PURPOSE SPDT 6A 24V

SMBJ36CA-13-F

SMBJ36CA-13-F

Diodes Incorporated

TVS DIODE 36V 58.1V SMB

ADP2164ACPZ-1.8-R7

ADP2164ACPZ-1.8-R7

Analog Devices

IC REG BUCK 1.8V 4A 16LFCSP

HCPL-3700-500E

HCPL-3700-500E

Broadcom

OPTOISOLATOR 3.75KV DARL 8DIP GW

AT28C16-15PC

AT28C16-15PC

Microchip Technology

IC EEPROM 16K PARALLEL 24DIP

LTC4365IDDB#TRMPBF

LTC4365IDDB#TRMPBF

Linear Technology/Analog Devices

IC OVERVOLTAGE PROTECT 8-DFN