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NVMYS4D6N04CLTWG

NVMYS4D6N04CLTWG

For Reference Only

Part Number NVMYS4D6N04CLTWG
PNEDA Part # NVMYS4D6N04CLTWG
Description T6 40V LL LFPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,196
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMYS4D6N04CLTWG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMYS4D6N04CLTWG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVMYS4D6N04CLTWG, NVMYS4D6N04CLTWG Datasheet (Total Pages: 6, Size: 194.19 KB)
PDFNVMYS4D6N04CLTWG Datasheet Cover
NVMYS4D6N04CLTWG Datasheet Page 2 NVMYS4D6N04CLTWG Datasheet Page 3 NVMYS4D6N04CLTWG Datasheet Page 4 NVMYS4D6N04CLTWG Datasheet Page 5 NVMYS4D6N04CLTWG Datasheet Page 6

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NVMYS4D6N04CLTWG Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C21A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK4 (5x6)
Package / CaseSOT-1023, 4-LFPAK

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