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IXFH36N50P

IXFH36N50P

For Reference Only

Part Number IXFH36N50P
PNEDA Part # IXFH36N50P
Description MOSFET N-CH 500V 36A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,668
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH36N50P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH36N50P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH36N50P, IXFH36N50P Datasheet (Total Pages: 6, Size: 212.04 KB)
PDFIXFV36N50PS Datasheet Cover
IXFV36N50PS Datasheet Page 2 IXFV36N50PS Datasheet Page 3 IXFV36N50PS Datasheet Page 4 IXFV36N50PS Datasheet Page 5 IXFV36N50PS Datasheet Page 6

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IXFH36N50P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs170mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs93nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds5500pF @ 25V
FET Feature-
Power Dissipation (Max)540W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

8.8mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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Infineon Technologies

Manufacturer

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Series

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FET Type

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100V

Current - Continuous Drain (Id) @ 25°C

59A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

18mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 25V

FET Feature

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Power Dissipation (Max)

160W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

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Diodes Incorporated

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Diodes Incorporated

Series

Automotive, AEC-Q101

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N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

886pF @ 50V

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Power Dissipation (Max)

125W (Tc)

Operating Temperature

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Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

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FET Type

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Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

45mOhm @ 3.9A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

540pF @ 20V

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Power Dissipation (Max)

750mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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Package / Case

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