Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BUK9M7R2-40EX

BUK9M7R2-40EX

For Reference Only

Part Number BUK9M7R2-40EX
PNEDA Part # BUK9M7R2-40EX
Description MOSFET N-CH 40V 70A LFPAK
Manufacturer Nexperia
Unit Price Request a Quote
In Stock 2,520
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUK9M7R2-40EX Resources

Brand Nexperia
ECAD Module ECAD
Mfr. Part NumberBUK9M7R2-40EX
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BUK9M7R2-40EX, BUK9M7R2-40EX Datasheet (Total Pages: 13, Size: 717.44 KB)
PDFBUK9M7R2-40EX Datasheet Cover
BUK9M7R2-40EX Datasheet Page 2 BUK9M7R2-40EX Datasheet Page 3 BUK9M7R2-40EX Datasheet Page 4 BUK9M7R2-40EX Datasheet Page 5 BUK9M7R2-40EX Datasheet Page 6 BUK9M7R2-40EX Datasheet Page 7 BUK9M7R2-40EX Datasheet Page 8 BUK9M7R2-40EX Datasheet Page 9 BUK9M7R2-40EX Datasheet Page 10 BUK9M7R2-40EX Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BUK9M7R2-40EX Datasheet
  • where to find BUK9M7R2-40EX
  • Nexperia

  • Nexperia BUK9M7R2-40EX
  • BUK9M7R2-40EX PDF Datasheet
  • BUK9M7R2-40EX Stock

  • BUK9M7R2-40EX Pinout
  • Datasheet BUK9M7R2-40EX
  • BUK9M7R2-40EX Supplier

  • Nexperia Distributor
  • BUK9M7R2-40EX Price
  • BUK9M7R2-40EX Distributor

BUK9M7R2-40EX Specifications

ManufacturerNexperia USA Inc.
SeriesAutomotive, AEC-Q101, TrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs5.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs19.7nC @ 5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds2567pF @ 25V
FET Feature-
Power Dissipation (Max)79W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK33
Package / CaseSOT-1210, 8-LFPAK33

The Products You May Be Interested In

RS1E280GNTB

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

28A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.6mOhm @ 28A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 15V

FET Feature

-

Power Dissipation (Max)

3W (Ta), 31W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HSOP

Package / Case

8-PowerTDFN

MCP87130T-U/MF

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

43A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

3.3V, 10V

Rds On (Max) @ Id, Vgs

13.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

1.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 4.5V

Vgs (Max)

+10V, -8V

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 12.5V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PDFN (5x6)

Package / Case

8-PowerTDFN

JANTXV2N6760

Microsemi

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/542

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.22Ohm @ 5.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

4W (Ta), 75W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-204AA (TO-3)

Package / Case

TO-204AA, TO-3

IRFP4229PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

44A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

46mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4560pF @ 25V

FET Feature

-

Power Dissipation (Max)

310W (Tc)

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

97mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.9nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

170pF @ 15V

FET Feature

-

Power Dissipation (Max)

270mW (Ta), 1.92W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-323-3

Package / Case

SC-70, SOT-323

Recently Sold

FR014H5JZ

FR014H5JZ

ON Semiconductor

HI SIDE REV BIAS PROTECT 30V MLP

EMC1001-AFZQ-TR

EMC1001-AFZQ-TR

Microchip Technology

SENSOR DIGITAL -25C-125C SOT6

MC9S08DN16ACLC

MC9S08DN16ACLC

NXP

IC MCU 8BIT 16KB FLASH 32LQFP

SC2596SETRT

SC2596SETRT

Semtech

IC REG LDO DDR 1OUT 8SOIC

IRFR5305PBF

IRFR5305PBF

Infineon Technologies

MOSFET P-CH 55V 31A DPAK

LTC2855IDE

LTC2855IDE

Linear Technology/Analog Devices

IC TRANSCEIVER FULL 1/1 12DFN

ABLS2-12.000MHZ-D4Y-T

ABLS2-12.000MHZ-D4Y-T

Abracon

CRYSTAL 12.0000MHZ 18PF SMD

MT41K256M16HA-125 AIT:E

MT41K256M16HA-125 AIT:E

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

LTC1760IFW#PBF

LTC1760IFW#PBF

Linear Technology/Analog Devices

IC MANAGER BATTERY DUAL 48TSSOP

MAX809SEUR+T

MAX809SEUR+T

Maxim Integrated

IC MPU/RESET CIRC SOT23-3

MPC9448ACR2

MPC9448ACR2

IDT, Integrated Device Technology

IC CLK BUFFER 1:12 350MHZ 32TQFP

SI2300DS-T1-GE3

SI2300DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 3.6A SOT-23