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IXBH10N170

IXBH10N170

For Reference Only

Part Number IXBH10N170
PNEDA Part # IXBH10N170
Description IGBT 1700V 20A 140W TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,370
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXBH10N170 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXBH10N170
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXBH10N170, IXBH10N170 Datasheet (Total Pages: 5, Size: 483.77 KB)
PDFIXBH10N170 Datasheet Cover
IXBH10N170 Datasheet Page 2 IXBH10N170 Datasheet Page 3 IXBH10N170 Datasheet Page 4 IXBH10N170 Datasheet Page 5

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IXBH10N170 Specifications

ManufacturerIXYS
SeriesBIMOSFET™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)20A
Current - Collector Pulsed (Icm)40A
Vce(on) (Max) @ Vge, Ic3.8V @ 15V, 10A
Power - Max140W
Switching Energy6mJ (off)
Input TypeStandard
Gate Charge30nC
Td (on/off) @ 25°C35ns/500ns
Test Condition1360V, 10A, 56Ohm, 15V
Reverse Recovery Time (trr)360ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXBH)

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1000V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

100W

Switching Energy

2.5mJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Operating Temperature

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Package / Case

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Supplier Device Package

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