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IXBH10N170 Datasheet

IXBH10N170 Datasheet
Total Pages: 5
Size: 483.77 KB
IXYS
This datasheet covers 2 part numbers: IXBH10N170, IXBT10N170
IXBH10N170 Datasheet Page 1
IXBH10N170 Datasheet Page 2
IXBH10N170 Datasheet Page 3
IXBH10N170 Datasheet Page 4
IXBH10N170 Datasheet Page 5
IXBH10N170

IXYS

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

40A

Vce(on) (Max) @ Vge, Ic

3.8V @ 15V, 10A

Power - Max

140W

Switching Energy

6mJ (off)

Input Type

Standard

Gate Charge

30nC

Td (on/off) @ 25°C

35ns/500ns

Test Condition

1360V, 10A, 56Ohm, 15V

Reverse Recovery Time (trr)

360ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXBH)

IXBT10N170

IXYS

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

40A

Vce(on) (Max) @ Vge, Ic

3.8V @ 15V, 10A

Power - Max

140W

Switching Energy

6mJ (off)

Input Type

Standard

Gate Charge

30nC

Td (on/off) @ 25°C

35ns/500ns

Test Condition

1360V, 10A, 56Ohm, 15V

Reverse Recovery Time (trr)

360ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268