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IRFSL3507

IRFSL3507

For Reference Only

Part Number IRFSL3507
PNEDA Part # IRFSL3507
Description MOSFET N-CH 75V 97A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,520
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFSL3507 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFSL3507
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFSL3507, IRFSL3507 Datasheet (Total Pages: 12, Size: 359.75 KB)
PDFIRFS3507 Datasheet Cover
IRFS3507 Datasheet Page 2 IRFS3507 Datasheet Page 3 IRFS3507 Datasheet Page 4 IRFS3507 Datasheet Page 5 IRFS3507 Datasheet Page 6 IRFS3507 Datasheet Page 7 IRFS3507 Datasheet Page 8 IRFS3507 Datasheet Page 9 IRFS3507 Datasheet Page 10 IRFS3507 Datasheet Page 11

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IRFSL3507 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C97A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.8mOhm @ 58A, 10V
Vgs(th) (Max) @ Id4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3540pF @ 50V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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