SQP120N06-3M5L_GE3
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For Reference Only
Part Number | SQP120N06-3M5L_GE3 |
PNEDA Part # | SQP120N06-3M5L_GE3 |
Description | MOSFET N-CH 60V 120A TO220AB |
Manufacturer | Vishay Siliconix |
Unit Price | Request a Quote |
In Stock | 8,628 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
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SQP120N06-3M5L_GE3 Resources
Brand | Vishay Siliconix |
ECAD Module |
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Mfr. Part Number | SQP120N06-3M5L_GE3 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
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SQP120N06-3M5L_GE3 Specifications
Manufacturer | Vishay Siliconix |
Series | Automotive, AEC-Q101, TrenchFET® |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3.5mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 330nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 14700pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
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