Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF4905PBF

IRF4905PBF

For Reference Only

Part Number IRF4905PBF
PNEDA Part # IRF4905PBF
Description MOSFET P-CH 55V 74A TO-220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 375,540
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF4905PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF4905PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF4905PBF Datasheet
  • where to find IRF4905PBF
  • Infineon Technologies

  • Infineon Technologies IRF4905PBF
  • IRF4905PBF PDF Datasheet
  • IRF4905PBF Stock

  • IRF4905PBF Pinout
  • Datasheet IRF4905PBF
  • IRF4905PBF Supplier

  • Infineon Technologies Distributor
  • IRF4905PBF Price
  • IRF4905PBF Distributor

IRF4905PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C74A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs20mOhm @ 38A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3400pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

HUF76629D3ST-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

52mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1280pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

STP19NF20

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MESH OVERLAY™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

160mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

24nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

800pF @ 25V

FET Feature

-

Power Dissipation (Max)

90W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

DMT615MLFV-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

8.5A (Ta), 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1039pF @ 30V

FET Feature

-

Power Dissipation (Max)

1.76W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN

SPI80N06S2L-05

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

230nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7530pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3-1

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

BUK9M156-100EX

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

9.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

150mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

7.4nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

695pF @ 25V

FET Feature

-

Power Dissipation (Max)

36W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK33

Package / Case

SOT-1210, 8-LFPAK33

Recently Sold

IXGX120N60B

IXGX120N60B

IXYS

IGBT 600V 200A 660W TO247

NAND256W3A2BZA6E

NAND256W3A2BZA6E

Micron Technology Inc.

IC FLASH 256M PARALLEL 55VFBGA

PTN3363BSMP

PTN3363BSMP

NXP

IC DVI/HDMI LVL SHIFTER 32HVQFN

STPS2H100U

STPS2H100U

STMicroelectronics

DIODE SCHOTTKY 100V 2A SMB

MT29F2G16ABBEAHC-AIT:E

MT29F2G16ABBEAHC-AIT:E

Micron Technology Inc.

IC FLASH 2G PARALLEL FBGA

IHLP2525CZER3R3M01

IHLP2525CZER3R3M01

Vishay Dale

FIXED IND 3.3UH 6A 30 MOHM SMD

0217002.MXP

0217002.MXP

Littelfuse

FUSE GLASS 2A 250VAC 5X20MM

SI8901D-A01-GS

SI8901D-A01-GS

Silicon Labs

IC ADC 10BIT SAR 16SOIC

AT24C256-10TI-2.7

AT24C256-10TI-2.7

Microchip Technology

IC EEPROM 256K I2C 1MHZ 8TSSOP

MAX1104EUA+

MAX1104EUA+

Maxim Integrated

IC CODEC 8BIT 8-UMAX

74HC132D,653

74HC132D,653

Nexperia

IC GATE NAND SCHMITT 4CH 14SO

WSL120600000ZEA9

WSL120600000ZEA9

Vishay Dale

RES 0 OHM JUMPER 1206