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HUF76629D3ST-F085

HUF76629D3ST-F085

For Reference Only

Part Number HUF76629D3ST-F085
PNEDA Part # HUF76629D3ST-F085
Description MOSFET N-CH 100V 20A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,578
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HUF76629D3ST-F085 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHUF76629D3ST-F085
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
HUF76629D3ST-F085, HUF76629D3ST-F085 Datasheet (Total Pages: 6, Size: 428.42 KB)
PDFHUF76629D3ST-F085 Datasheet Cover
HUF76629D3ST-F085 Datasheet Page 2 HUF76629D3ST-F085 Datasheet Page 3 HUF76629D3ST-F085 Datasheet Page 4 HUF76629D3ST-F085 Datasheet Page 5 HUF76629D3ST-F085 Datasheet Page 6

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HUF76629D3ST-F085 Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101, UltraFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs52mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds1280pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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