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SPI80N06S2L-05

SPI80N06S2L-05

For Reference Only

Part Number SPI80N06S2L-05
PNEDA Part # SPI80N06S2L-05
Description MOSFET N-CH 55V 80A I2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,348
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPI80N06S2L-05 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPI80N06S2L-05
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPI80N06S2L-05, SPI80N06S2L-05 Datasheet (Total Pages: 8, Size: 415.79 KB)
PDFSPP80N06S2L-05 Datasheet Cover
SPP80N06S2L-05 Datasheet Page 2 SPP80N06S2L-05 Datasheet Page 3 SPP80N06S2L-05 Datasheet Page 4 SPP80N06S2L-05 Datasheet Page 5 SPP80N06S2L-05 Datasheet Page 6 SPP80N06S2L-05 Datasheet Page 7 SPP80N06S2L-05 Datasheet Page 8

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SPI80N06S2L-05 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs230nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7530pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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