Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BUZ73AE3046XK

BUZ73AE3046XK

For Reference Only

Part Number BUZ73AE3046XK
PNEDA Part # BUZ73AE3046XK
Description MOSFET N-CH 200V 5.5A TO-220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,316
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUZ73AE3046XK Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBUZ73AE3046XK
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BUZ73AE3046XK, BUZ73AE3046XK Datasheet (Total Pages: 14, Size: 526.25 KB)
PDFBUZ73AE3046XK Datasheet Cover
BUZ73AE3046XK Datasheet Page 2 BUZ73AE3046XK Datasheet Page 3 BUZ73AE3046XK Datasheet Page 4 BUZ73AE3046XK Datasheet Page 5 BUZ73AE3046XK Datasheet Page 6 BUZ73AE3046XK Datasheet Page 7 BUZ73AE3046XK Datasheet Page 8 BUZ73AE3046XK Datasheet Page 9 BUZ73AE3046XK Datasheet Page 10 BUZ73AE3046XK Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BUZ73AE3046XK Datasheet
  • where to find BUZ73AE3046XK
  • Infineon Technologies

  • Infineon Technologies BUZ73AE3046XK
  • BUZ73AE3046XK PDF Datasheet
  • BUZ73AE3046XK Stock

  • BUZ73AE3046XK Pinout
  • Datasheet BUZ73AE3046XK
  • BUZ73AE3046XK Supplier

  • Infineon Technologies Distributor
  • BUZ73AE3046XK Price
  • BUZ73AE3046XK Distributor

BUZ73AE3046XK Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds530pF @ 25V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

The Products You May Be Interested In

BSR315PH6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

620mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

800mOhm @ 620mA, 10V

Vgs(th) (Max) @ Id

2V @ 160µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

176pF @ 25V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SC-59

Package / Case

TO-236-3, SC-59, SOT-23-3

SPA06N60C3XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

6.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 3.9A, 10V

Vgs(th) (Max) @ Id

3.9V @ 260µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

620pF @ 25V

FET Feature

-

Power Dissipation (Max)

32W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-FP

Package / Case

TO-220-3 Full Pack

SIR878DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1250pF @ 50V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 44.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

IRF60R217

Infineon Technologies

Manufacturer

Infineon Technologies

Series

StrongIRFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

9.9mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

3.7V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

66nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2170pF @ 25V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-PAK (TO-252AA)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

PMF250XNEAX

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

900mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

254mOhm @ 900mA, 4.5V

Vgs(th) (Max) @ Id

1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.65nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

81pF @ 15V

FET Feature

-

Power Dissipation (Max)

342mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70

Package / Case

SC-70, SOT-323

Recently Sold

0CNL200.V

0CNL200.V

Littelfuse

FUSE STRIP 200A 32VAC/VDC BOLT

SMAJ40CA

SMAJ40CA

Bourns

TVS DIODE 40V 64.5V SMA

LM833DT

LM833DT

STMicroelectronics

IC AUDIO 2 CIRCUIT 8SO

24LC01BT-I/OT

24LC01BT-I/OT

Microchip Technology

IC EEPROM 1K I2C 400KHZ SOT23-5

NIS5135MN1TXG

NIS5135MN1TXG

ON Semiconductor

IC ELECTRONIC FUSE 10DFN

KSZ9031RNXIC

KSZ9031RNXIC

Microchip Technology

IC TRANSCEIVER FULL 4/4 48QFN

LFXP2-17E-6FTN256I

LFXP2-17E-6FTN256I

Lattice Semiconductor Corporation

IC FPGA 201 I/O 256FTBGA

BR24T128-W

BR24T128-W

Rohm Semiconductor

IC EEPROM 128K I2C 8-DIP-T

XC878CM16FFI5VACFXUMA1

XC878CM16FFI5VACFXUMA1

Infineon Technologies

IC MCU 8BIT 64KB FLASH 64LQFP

PIC32MX795F512L-80I/PT

PIC32MX795F512L-80I/PT

Microchip Technology

IC MCU 32BIT 512KB FLASH 100TQFP

ALS70A243DF063

ALS70A243DF063

KEMET

CAP ALUM 24000UF 20% 63V SCREW

EPM2210F256I5N

EPM2210F256I5N

Intel

IC CPLD 1700MC 7NS 256FBGA