Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPD100N04S4L02ATMA1

IPD100N04S4L02ATMA1

For Reference Only

Part Number IPD100N04S4L02ATMA1
PNEDA Part # IPD100N04S4L02ATMA1
Description MOSFET N-CHANNEL_30/40V
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,100
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD100N04S4L02ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD100N04S4L02ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPD100N04S4L02ATMA1 Datasheet
  • where to find IPD100N04S4L02ATMA1
  • Infineon Technologies

  • Infineon Technologies IPD100N04S4L02ATMA1
  • IPD100N04S4L02ATMA1 PDF Datasheet
  • IPD100N04S4L02ATMA1 Stock

  • IPD100N04S4L02ATMA1 Pinout
  • Datasheet IPD100N04S4L02ATMA1
  • IPD100N04S4L02ATMA1 Supplier

  • Infineon Technologies Distributor
  • IPD100N04S4L02ATMA1 Price
  • IPD100N04S4L02ATMA1 Distributor

IPD100N04S4L02ATMA1 Specifications

ManufacturerInfineon Technologies
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

IXTA6N50D2

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

500mOhm @ 3A, 0V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

96nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (IXTA)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SPU30P06P

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

75mOhm @ 21.5A, 10V

Vgs(th) (Max) @ Id

4V @ 1.7mA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1535pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

IXTH20N50D

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

330mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

125nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

400W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

DMN3070SSN-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

40mOhm @ 4.2A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

697pF @ 15V

FET Feature

-

Power Dissipation (Max)

780mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-59

Package / Case

TO-236-3, SC-59, SOT-23-3

NP32N055SLE-E1-AZ

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Recently Sold

SUD40N08-16-E3

SUD40N08-16-E3

Vishay Siliconix

MOSFET N-CH 80V 40A TO252

BAT54WS-7-F

BAT54WS-7-F

Diodes Incorporated

DIODE SCHOTTKY 30V 100MA SOD323

MT28GU01GAAA1EGC-0SIT

MT28GU01GAAA1EGC-0SIT

Micron Technology Inc.

IC FLASH 1G PARALLEL 64TBGA

NC7SV125P5X

NC7SV125P5X

ON Semiconductor

IC BUF NON-INVERT 3.6V SC70-5

ABM8G-24.000MHZ-18-D2Y-T

ABM8G-24.000MHZ-18-D2Y-T

Abracon

CRYSTAL 24.0000MHZ 18PF SMD

FDS6680AS

FDS6680AS

ON Semiconductor

MOSFET N-CH 30V 11.5A 8SOIC

MPZ2012S300AT000

MPZ2012S300AT000

TDK

FERRITE BEAD 30 OHM 0805 1LN

MMBT2907

MMBT2907

ON Semiconductor

TRANS PNP 40V 0.8A SOT-23

CP2105-F01-GM

CP2105-F01-GM

Silicon Labs

IC SGL USB-DL UART BRIDGE 24QFN

FDS4435BZ

FDS4435BZ

ON Semiconductor

MOSFET P-CH 30V 8.8A 8-SOIC

MAX31730AUB+T

MAX31730AUB+T

Maxim Integrated

IC REMOTE TEMP SENSOR USSOP

S29JL064J60TFI003

S29JL064J60TFI003

Cypress Semiconductor

IC FLASH 64M PARALLEL 48TSOP