IXTH20N50D
For Reference Only
| Part Number | IXTH20N50D |
| PNEDA Part # | IXTH20N50D |
| Description | MOSFET N-CH 500V 20A TO-247 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 5,904 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 30 - Apr 4 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXTH20N50D Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXTH20N50D |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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IXTH20N50D Specifications
| Manufacturer | IXYS |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 330mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 125nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 25V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 400W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 (IXTH) |
| Package / Case | TO-247-3 |
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Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 12A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 20V FET Feature - Power Dissipation (Max) 2.3W (Ta), 50W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251A Package / Case TO-251-3 Stub Leads, IPak |
Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 72A (Tc) Drive Voltage (Max Rds On, Min Rds On) 18V Rds On (Max) @ Id, Vgs 39mOhm @ 27A, 18V Vgs(th) (Max) @ Id 5.6V @ 13.3mA Gate Charge (Qg) (Max) @ Vgs 131nC @ 18V Vgs (Max) +22V, -4V Input Capacitance (Ciss) (Max) @ Vds 2222pF @ 800V FET Feature - Power Dissipation (Max) 339W (Tc) Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247N Package / Case TO-247-3 |
