IGT60R190D1SATMA1
For Reference Only
| Part Number | IGT60R190D1SATMA1 |
| PNEDA Part # | IGT60R190D1SATMA1 |
| Description | IC GAN FET 600V 23A 8HSOF |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,700 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IGT60R190D1SATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IGT60R190D1SATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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IGT60R190D1SATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolGaN™ |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 1.6V @ 960µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 157pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 55.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HSOF-8-3 |
| Package / Case | 8-PowerSFN |
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