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IGT60R190D1SATMA1

IGT60R190D1SATMA1

For Reference Only

Part Number IGT60R190D1SATMA1
PNEDA Part # IGT60R190D1SATMA1
Description IC GAN FET 600V 23A 8HSOF
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,700
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IGT60R190D1SATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIGT60R190D1SATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IGT60R190D1SATMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolGaN™
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id1.6V @ 960µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-10V
Input Capacitance (Ciss) (Max) @ Vds157pF @ 400V
FET Feature-
Power Dissipation (Max)55.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-3
Package / Case8-PowerSFN

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