IGT60R190D1SATMA1
For Reference Only
| Part Number | IGT60R190D1SATMA1 |
| PNEDA Part # | IGT60R190D1SATMA1 |
| Description | IC GAN FET 600V 23A 8HSOF |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,700 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IGT60R190D1SATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IGT60R190D1SATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IGT60R190D1SATMA1 Datasheet
- where to find IGT60R190D1SATMA1
- Infineon Technologies
- Infineon Technologies IGT60R190D1SATMA1
- IGT60R190D1SATMA1 PDF Datasheet
- IGT60R190D1SATMA1 Stock
- IGT60R190D1SATMA1 Pinout
- Datasheet IGT60R190D1SATMA1
- IGT60R190D1SATMA1 Supplier
- Infineon Technologies Distributor
- IGT60R190D1SATMA1 Price
- IGT60R190D1SATMA1 Distributor
IGT60R190D1SATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolGaN™ |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 1.6V @ 960µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 157pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 55.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HSOF-8-3 |
| Package / Case | 8-PowerSFN |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 160A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.4mOhm @ 75A, 10V Vgs(th) (Max) @ Id 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6320pF @ 25V FET Feature - Power Dissipation (Max) 231W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer IXYS Series MegaMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 20mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 360nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7700pF @ 25V FET Feature - Power Dissipation (Max) 730W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264 (IXTK) Package / Case TO-264-3, TO-264AA |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 600mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 680pF @ 100V FET Feature - Power Dissipation (Max) 78W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Microsemi Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 335A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 15mOhm @ 167.5A, 10V Vgs(th) (Max) @ Id 5V @ 20mA Gate Charge (Qg) (Max) @ Vgs 800nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 42200pF @ 25V FET Feature - Power Dissipation (Max) 3290W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SP6 Package / Case SP6 |
Manufacturer Diodes Incorporated Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
