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IXXQ30N60B3M

IXXQ30N60B3M

For Reference Only

Part Number IXXQ30N60B3M
PNEDA Part # IXXQ30N60B3M
Description IGBT
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,166
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXXQ30N60B3M Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXXQ30N60B3M
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXXQ30N60B3M Specifications

ManufacturerIXYS
SeriesXPT™, GenX3™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)33A
Current - Collector Pulsed (Icm)140A
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 24A
Power - Max90W
Switching Energy550µJ (on), 800µJ (off)
Input TypeStandard
Gate Charge39nC
Td (on/off) @ 25°C23ns/150ns
Test Condition400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr)36ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3 Full Pack
Supplier Device PackageTO-3P

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

-

Power - Max

-

Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Series

GenX3™, XPT™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

900V

Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

48A

Vce(on) (Max) @ Vge, Ic

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Power - Max

125W

Switching Energy

460µJ (on), 180µJ (off)

Input Type

Standard

Gate Charge

13.3nC

Td (on/off) @ 25°C

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Test Condition

450V, 8A, 30Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

Automotive, AEC-Q101, EcoSPARK®

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

400V

Current - Collector (Ic) (Max)

41A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

21nC

Td (on/off) @ 25°C

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Test Condition

300V, 6.5A, 1000Ohm, 5V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

D-PAK (TO-252)

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 12A

Power - Max

150W

Switching Energy

160µJ (on), 120µJ (off)

Input Type

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Gate Charge

24nC

Td (on/off) @ 25°C

18ns/73ns

Test Condition

400V, 12A, 22Ohm, 15V

Reverse Recovery Time (trr)

30ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263 (IXGA)

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

31A

Current - Collector Pulsed (Icm)

62A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 15A

Power - Max

208W

Switching Energy

220µJ (on), 340µJ (off)

Input Type

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Gate Charge

56nC

Td (on/off) @ 25°C

34ns/184ns

Test Condition

400V, 15A, 22Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

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