HGTG18N120BN Datasheet
HGTG18N120BN Datasheet
Total Pages: 8
Size: 112.8 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
HGTG18N120BN
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Manufacturer ON Semiconductor Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 54A Current - Collector Pulsed (Icm) 165A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 18A Power - Max 390W Switching Energy 800µJ (on), 1.8mJ (off) Input Type Standard Gate Charge 165nC Td (on/off) @ 25°C 23ns/170ns Test Condition 960V, 18A, 3Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |
