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IXA12IF1200HB

IXA12IF1200HB

For Reference Only

Part Number IXA12IF1200HB
PNEDA Part # IXA12IF1200HB
Description IGBT 1200V 20A 85W TO247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,654
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXA12IF1200HB Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXA12IF1200HB
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXA12IF1200HB, IXA12IF1200HB Datasheet (Total Pages: 6, Size: 144.85 KB)
PDFIXA12IF1200HB Datasheet Cover
IXA12IF1200HB Datasheet Page 2 IXA12IF1200HB Datasheet Page 3 IXA12IF1200HB Datasheet Page 4 IXA12IF1200HB Datasheet Page 5 IXA12IF1200HB Datasheet Page 6

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IXA12IF1200HB Specifications

ManufacturerIXYS
Series-
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)20A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 10A
Power - Max85W
Switching Energy1.1mJ (on), 1.1mJ (off)
Input TypeStandard
Gate Charge27nC
Td (on/off) @ 25°C-
Test Condition600V, 10A, 100Ohm, 15V
Reverse Recovery Time (trr)350ns
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (HB)

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

330nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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STMicroelectronics

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

44A

Vce(on) (Max) @ Vge, Ic

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Power - Max

66W

Switching Energy

190µJ (on), 920µJ (off)

Input Type

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Gate Charge

27nC

Td (on/off) @ 25°C

26ns/194ns

Test Condition

480V, 12A, 50Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

D-Pak

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 30A

Power - Max

300W

Switching Energy

200µJ (off)

Input Type

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Gate Charge

95nC

Td (on/off) @ 25°C

18ns/90ns

Test Condition

400V, 30A, 3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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