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HGTG12N60B3 Datasheet

HGTG12N60B3 Datasheet
Total Pages: 8
Size: 198.54 KB
ON Semiconductor
This datasheet covers 1 part numbers: HGTG12N60B3
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HGTG12N60B3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

27A

Current - Collector Pulsed (Icm)

110A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 12A

Power - Max

104W

Switching Energy

150µJ (on), 250µJ (off)

Input Type

Standard

Gate Charge

51nC

Td (on/off) @ 25°C

26ns/150ns

Test Condition

480V, 12A, 25Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3