IXGT32N60C
For Reference Only
| Part Number | IXGT32N60C |
| PNEDA Part # | IXGT32N60C |
| Description | IGBT 600V 60A 200W TO268 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 4,410 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 30 - Apr 4 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXGT32N60C Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXGT32N60C |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
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IXGT32N60C Specifications
| Manufacturer | IXYS |
| Series | HiPerFAST™, Lightspeed™ |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 60A |
| Current - Collector Pulsed (Icm) | 120A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 32A |
| Power - Max | 200W |
| Switching Energy | 320µJ (off) |
| Input Type | Standard |
| Gate Charge | 110nC |
| Td (on/off) @ 25°C | 25ns/85ns |
| Test Condition | 480V, 32A, 4.7Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package | TO-268 |
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Manufacturer Microsemi Corporation Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 88A Current - Collector Pulsed (Icm) 160A Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 40A Power - Max 500W Switching Energy 1.38mJ (on), 906µJ (off) Input Type Standard Gate Charge 210nC Td (on/off) @ 25°C 22ns/163ns Test Condition 600V, 40A, 4.3Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D3Pak |
Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 34A Current - Collector Pulsed (Icm) 56A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A Power - Max 125W Switching Energy 55µJ (on), 60µJ (off) Input Type Standard Gate Charge 37nC Td (on/off) @ 25°C 11ns/100ns Test Condition 390V, 7A, 25Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |
Manufacturer STMicroelectronics Series PowerMESH™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 15A Current - Collector Pulsed (Icm) 21A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 3A Power - Max 56W Switching Energy 20µJ (on), 68µJ (off) Input Type Standard Gate Charge 13.6nC Td (on/off) @ 25°C 12ns/76ns Test Condition 390V, 3A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package DPAK |
