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FQD12P10TM-F085

FQD12P10TM-F085

For Reference Only

Part Number FQD12P10TM-F085
PNEDA Part # FQD12P10TM-F085
Description MOSFET P-CH 100V 9.4A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 44,508
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD12P10TM-F085 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD12P10TM-F085
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD12P10TM-F085, FQD12P10TM-F085 Datasheet (Total Pages: 8, Size: 877.84 KB)
PDFFQD12P10TM-F085 Datasheet Cover
FQD12P10TM-F085 Datasheet Page 2 FQD12P10TM-F085 Datasheet Page 3 FQD12P10TM-F085 Datasheet Page 4 FQD12P10TM-F085 Datasheet Page 5 FQD12P10TM-F085 Datasheet Page 6 FQD12P10TM-F085 Datasheet Page 7 FQD12P10TM-F085 Datasheet Page 8

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FQD12P10TM-F085 Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs290mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds800pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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