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SIA465EDJ-T1-GE3

SIA465EDJ-T1-GE3

For Reference Only

Part Number SIA465EDJ-T1-GE3
PNEDA Part # SIA465EDJ-T1-GE3
Description MOSFET P-CH 20V 12A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,814
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA465EDJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA465EDJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIA465EDJ-T1-GE3, SIA465EDJ-T1-GE3 Datasheet (Total Pages: 9, Size: 252.03 KB)
PDFSIA465EDJ-T1-GE3 Datasheet Cover
SIA465EDJ-T1-GE3 Datasheet Page 2 SIA465EDJ-T1-GE3 Datasheet Page 3 SIA465EDJ-T1-GE3 Datasheet Page 4 SIA465EDJ-T1-GE3 Datasheet Page 5 SIA465EDJ-T1-GE3 Datasheet Page 6 SIA465EDJ-T1-GE3 Datasheet Page 7 SIA465EDJ-T1-GE3 Datasheet Page 8 SIA465EDJ-T1-GE3 Datasheet Page 9

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SIA465EDJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs16.5mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds2130pF @ 10V
FET Feature-
Power Dissipation (Max)19W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package / CasePowerPAK® SC-70-6

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