FQD12P10TM-F085 Datasheet
FQD12P10TM-F085 Datasheet
Total Pages: 8
Size: 877.84 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
FQD12P10TM-F085
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Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 290mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
