FGP10N60UNDF
For Reference Only
| Part Number | FGP10N60UNDF |
| PNEDA Part # | FGP10N60UNDF |
| Description | IGBT 600V 20A 139W TO220-3 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 18,432 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FGP10N60UNDF Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FGP10N60UNDF |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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FGP10N60UNDF Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 20A |
| Current - Collector Pulsed (Icm) | 30A |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 10A |
| Power - Max | 139W |
| Switching Energy | 150µJ (on), 50µJ (off) |
| Input Type | Standard |
| Gate Charge | 37nC |
| Td (on/off) @ 25°C | 8ns/52.2ns |
| Test Condition | 400V, 10A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 37.7ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220-3 |
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Manufacturer Microsemi Corporation Series POWER MOS 7® IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 100A Current - Collector Pulsed (Icm) 160A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 40A Power - Max 543W Switching Energy 385µJ (on), 352µJ (off) Input Type Standard Gate Charge 135nC Td (on/off) @ 25°C 20ns/64ns Test Condition 400V, 40A, 5Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 [B] |
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