IXYP15N65C3D1M
For Reference Only
| Part Number | IXYP15N65C3D1M |
| PNEDA Part # | IXYP15N65C3D1M |
| Description | IGBT 650V 16A 48W TO-220 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 4,608 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 3 - Apr 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXYP15N65C3D1M Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXYP15N65C3D1M |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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IXYP15N65C3D1M Specifications
| Manufacturer | IXYS |
| Series | GenX3™, XPT™ |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 16A |
| Current - Collector Pulsed (Icm) | 80A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 15A |
| Power - Max | 48W |
| Switching Energy | 270µJ (on), 230µJ (off) |
| Input Type | Standard |
| Gate Charge | 19nC |
| Td (on/off) @ 25°C | 15ns/68ns |
| Test Condition | 400V, 15A, 20Ohm, 15V |
| Reverse Recovery Time (trr) | 30ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
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Manufacturer ON Semiconductor Series - IGBT Type Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 150A Current - Collector Pulsed (Icm) 225A Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 75A Power - Max 452W Switching Energy 3.05mJ (on), 1.35mJ (off) Input Type Standard Gate Charge 250nC Td (on/off) @ 25°C 27ns/128ns Test Condition 400V, 75A, 3Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |
Manufacturer ON Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 1250V Current - Collector (Ic) (Max) 40A Current - Collector Pulsed (Icm) 60A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A Power - Max 250W Switching Energy - Input Type Standard Gate Charge 129nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature - Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3PN |
Manufacturer ON Semiconductor Series - IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 400V Current - Collector (Ic) (Max) - Current - Collector Pulsed (Icm) 130A Vce(on) (Max) @ Vge, Ic 8V @ 4.5V, 130A Power - Max 45W Switching Energy - Input Type Standard Gate Charge - Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package I-PAK |
