AIHD10N60RATMA1
For Reference Only
| Part Number | AIHD10N60RATMA1 |
| PNEDA Part # | AIHD10N60RATMA1 |
| Description | IC DISCRETE 600V TO252-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 3,654 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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AIHD10N60RATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | AIHD10N60RATMA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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- Delivery date: usually 2 to 7 working days.
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AIHD10N60RATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 20A |
| Current - Collector Pulsed (Icm) | 30A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 10A |
| Power - Max | 150W |
| Switching Energy | 210µJ (on), 380µJ (off) |
| Input Type | Standard |
| Gate Charge | 64nC |
| Td (on/off) @ 25°C | 14ns/192ns |
| Test Condition | 400V, 10A, 23Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | PG-TO252-3-313 |
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Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 11A Current - Collector Pulsed (Icm) 22A Vce(on) (Max) @ Vge, Ic 4.3V @ 15V, 5A Power - Max 60W Switching Energy 450µJ (on), 440µJ (off) Input Type Standard Gate Charge 28nC Td (on/off) @ 25°C 23ns/93ns Test Condition 960V, 5A, 50Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package TO-262 |
