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NP80N04PUG-E1B-AY

NP80N04PUG-E1B-AY

For Reference Only

Part Number NP80N04PUG-E1B-AY
PNEDA Part # NP80N04PUG-E1B-AY
Description MOSFET N-CH 40V 80A TO-263
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 3,042
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP80N04PUG-E1B-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP80N04PUG-E1B-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NP80N04PUG-E1B-AY, NP80N04PUG-E1B-AY Datasheet (Total Pages: 12, Size: 338.2 KB)
PDFNP80N04PUG-E1B-AY Datasheet Cover
NP80N04PUG-E1B-AY Datasheet Page 2 NP80N04PUG-E1B-AY Datasheet Page 3 NP80N04PUG-E1B-AY Datasheet Page 4 NP80N04PUG-E1B-AY Datasheet Page 5 NP80N04PUG-E1B-AY Datasheet Page 6 NP80N04PUG-E1B-AY Datasheet Page 7 NP80N04PUG-E1B-AY Datasheet Page 8 NP80N04PUG-E1B-AY Datasheet Page 9 NP80N04PUG-E1B-AY Datasheet Page 10 NP80N04PUG-E1B-AY Datasheet Page 11

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NP80N04PUG-E1B-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs135nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7350pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 115W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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