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IRFH6200TR2PBF

IRFH6200TR2PBF

For Reference Only

Part Number IRFH6200TR2PBF
PNEDA Part # IRFH6200TR2PBF
Description MOSFET N-CH 20V 100A 5X6 PQFN
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,370
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFH6200TR2PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFH6200TR2PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IRFH6200TR2PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C49A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs0.95mOhm @ 50A, 10V
Vgs(th) (Max) @ Id1.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs230nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds10890pF @ 10V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 156W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PQFN (5x6)
Package / Case8-PowerVDFN

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