IRFH6200TR2PBF
For Reference Only
| Part Number | IRFH6200TR2PBF |
| PNEDA Part # | IRFH6200TR2PBF |
| Description | MOSFET N-CH 20V 100A 5X6 PQFN |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,370 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRFH6200TR2PBF Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IRFH6200TR2PBF |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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- Orders cannot be canceled after shipping the packages.
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IRFH6200TR2PBF Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 49A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Rds On (Max) @ Id, Vgs | 0.95mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 1.1V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 230nC @ 4.5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 10890pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 156W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
| Package / Case | 8-PowerVDFN |
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