IRL8113STRL
For Reference Only
| Part Number | IRL8113STRL |
| PNEDA Part # | IRL8113STRL |
| Description | MOSFET N-CH 30V 105A D2PAK |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,454 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRL8113STRL Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IRL8113STRL |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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IRL8113STRL Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 105A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 21A, 10V |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 4.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2840pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 1.95Ohm @ 500mA, 4V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 3.5nC @ 4V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 98pF @ 10V FET Feature - Power Dissipation (Max) 750mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92 Package / Case TO-226-3, TO-92-3 (TO-226AA) |
