Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRL8113STRL

IRL8113STRL

For Reference Only

Part Number IRL8113STRL
PNEDA Part # IRL8113STRL
Description MOSFET N-CH 30V 105A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,454
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 20 - Apr 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRL8113STRL Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRL8113STRL
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRL8113STRL, IRL8113STRL Datasheet (Total Pages: 13, Size: 308.15 KB)
PDFIRL8113S Datasheet Cover
IRL8113S Datasheet Page 2 IRL8113S Datasheet Page 3 IRL8113S Datasheet Page 4 IRL8113S Datasheet Page 5 IRL8113S Datasheet Page 6 IRL8113S Datasheet Page 7 IRL8113S Datasheet Page 8 IRL8113S Datasheet Page 9 IRL8113S Datasheet Page 10 IRL8113S Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRL8113STRL Datasheet
  • where to find IRL8113STRL
  • Infineon Technologies

  • Infineon Technologies IRL8113STRL
  • IRL8113STRL PDF Datasheet
  • IRL8113STRL Stock

  • IRL8113STRL Pinout
  • Datasheet IRL8113STRL
  • IRL8113STRL Supplier

  • Infineon Technologies Distributor
  • IRL8113STRL Price
  • IRL8113STRL Distributor

IRL8113STRL Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6mOhm @ 21A, 10V
Vgs(th) (Max) @ Id2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2840pF @ 15V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

IXFC30N60P

IXYS

Manufacturer

IXYS

Series

HiPerFET™, PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

250mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

85nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3820pF @ 25V

FET Feature

-

Power Dissipation (Max)

166W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS220™

Package / Case

ISOPLUS220™

NTTFS4824NTWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8.3A (Ta), 69A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 11.5V

Rds On (Max) @ Id, Vgs

5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 11.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2363pF @ 12V

FET Feature

-

Power Dissipation (Max)

660mW (Ta), 46.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WDFN (3.3x3.3)

Package / Case

8-PowerWDFN

SI4840DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.56W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

FDB8447L

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

15A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.5mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

52nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2620pF @ 20V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 60W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263AB

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

PMPB48EPAX

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

50mOhm @ 4.7A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

860pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.7W (Ta), 12.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN2020MD-6

Package / Case

6-UDFN Exposed Pad

Recently Sold

MMBT2369LT1G

MMBT2369LT1G

ON Semiconductor

TRANS NPN 15V 0.2A SOT23

LT1963AEST-3.3#TRPBF

LT1963AEST-3.3#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR 3.3V 1.5A SOT223-3

1SS355VMTE-17

1SS355VMTE-17

Rohm Semiconductor

DIODE GEN PURP 80V 100MA UMD2

SMBJ40A

SMBJ40A

Bourns

TVS DIODE 40V 64.5V SMB

DG4051EEN-T1-GE4

DG4051EEN-T1-GE4

Vishay Siliconix

IC MUX SINGLE 8CHAN 16-MINIQFN

TC4426AEOA

TC4426AEOA

Microchip Technology

IC MOSFET DVR 1.5A DUAL HS 8SOIC

T520B227M006ATE070

T520B227M006ATE070

KEMET

CAP TANT POLY 220UF 6.3V 3528

SI2300DS-T1-GE3

SI2300DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 3.6A SOT-23

MT25QU512ABB8ESF-0SIT

MT25QU512ABB8ESF-0SIT

Micron Technology Inc.

IC FLASH 512M SPI 133MHZ 16SOIC

0ZCJ0025AF2E

0ZCJ0025AF2E

Bel Fuse

PTC RESET FUSE 24V 250MA 1206

HSMP-3820-TR1G

HSMP-3820-TR1G

Broadcom

RF DIODE PIN 50V SOT23-3

MT47H64M16NF-25E AIT:M

MT47H64M16NF-25E AIT:M

Micron Technology Inc.

IC DRAM 1G PARALLEL 84FBGA