FCP190N65S3R0 Datasheet
FCP190N65S3R0 Datasheet
Total Pages: 10
Size: 357.44 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
FCP190N65S3R0
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Manufacturer ON Semiconductor Series SuperFET® III FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 1.7mA Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 400V FET Feature - Power Dissipation (Max) 144W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
