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NTLJD3182FZTBG

NTLJD3182FZTBG

For Reference Only

Part Number NTLJD3182FZTBG
PNEDA Part # NTLJD3182FZTBG
Description MOSFET P-CH 20V 2.2A 6-WDFN
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,266
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTLJD3182FZTBG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTLJD3182FZTBG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTLJD3182FZTBG, NTLJD3182FZTBG Datasheet (Total Pages: 8, Size: 161.38 KB)
PDFNTLJD3182FZTBG Datasheet Cover
NTLJD3182FZTBG Datasheet Page 2 NTLJD3182FZTBG Datasheet Page 3 NTLJD3182FZTBG Datasheet Page 4 NTLJD3182FZTBG Datasheet Page 5 NTLJD3182FZTBG Datasheet Page 6 NTLJD3182FZTBG Datasheet Page 7 NTLJD3182FZTBG Datasheet Page 8

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NTLJD3182FZTBG Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.8nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds450pF @ 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)710mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WDFN (2x2)
Package / Case6-WDFN Exposed Pad

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