FCH099N65S3_F155 Datasheet
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Manufacturer ON Semiconductor Series SuperFET® III FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 99mOhm @ 15A, 10V Vgs(th) (Max) @ Id 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2480pF @ 400V FET Feature - Power Dissipation (Max) 227W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Manufacturer ON Semiconductor Series SuperFET® III FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 99mOhm @ 15A, 10V Vgs(th) (Max) @ Id 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2480pF @ 400V FET Feature - Power Dissipation (Max) 227W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
