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DMN30H4D0LFDE-7

DMN30H4D0LFDE-7

For Reference Only

Part Number DMN30H4D0LFDE-7
PNEDA Part # DMN30H4D0LFDE-7
Description MOSFET N-CH 300V .55A 6UDFN
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 307,758
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN30H4D0LFDE-7 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN30H4D0LFDE-7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN30H4D0LFDE-7, DMN30H4D0LFDE-7 Datasheet (Total Pages: 6, Size: 390.78 KB)
PDFDMN30H4D0LFDE-13 Datasheet Cover
DMN30H4D0LFDE-13 Datasheet Page 2 DMN30H4D0LFDE-13 Datasheet Page 3 DMN30H4D0LFDE-13 Datasheet Page 4 DMN30H4D0LFDE-13 Datasheet Page 5 DMN30H4D0LFDE-13 Datasheet Page 6

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DMN30H4D0LFDE-7 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 10V
Rds On (Max) @ Id, Vgs4Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds187.3pF @ 25V
FET Feature-
Power Dissipation (Max)630mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageU-DFN2020-6 (Type E)
Package / Case6-UDFN Exposed Pad

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