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IXTQ22N60P

IXTQ22N60P

For Reference Only

Part Number IXTQ22N60P
PNEDA Part # IXTQ22N60P
Description MOSFET N-CH 600V 22A TO-3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,048
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTQ22N60P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTQ22N60P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTQ22N60P, IXTQ22N60P Datasheet (Total Pages: 5, Size: 314.66 KB)
PDFIXTV22N60PS Datasheet Cover
IXTV22N60PS Datasheet Page 2 IXTV22N60PS Datasheet Page 3 IXTV22N60PS Datasheet Page 4 IXTV22N60PS Datasheet Page 5

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IXTQ22N60P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs350mOhm @ 11A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs62nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3600pF @ 25V
FET Feature-
Power Dissipation (Max)400W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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