DMN30H4D0LFDE-13 Datasheet
|
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 550mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.7V, 10V Rds On (Max) @ Id, Vgs 4Ohm @ 300mA, 10V Vgs(th) (Max) @ Id 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 187.3pF @ 25V FET Feature - Power Dissipation (Max) 630mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN2020-6 (Type E) Package / Case 6-UDFN Exposed Pad |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 550mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.7V, 10V Rds On (Max) @ Id, Vgs 4Ohm @ 300mA, 10V Vgs(th) (Max) @ Id 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 187.3pF @ 25V FET Feature - Power Dissipation (Max) 630mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN2020-6 (Type E) Package / Case 6-UDFN Exposed Pad |
