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DMG8N65SCT

DMG8N65SCT

For Reference Only

Part Number DMG8N65SCT
PNEDA Part # DMG8N65SCT
Description MOSFET N-CH 650V 8A TO220AB
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 5,292
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMG8N65SCT Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMG8N65SCT
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMG8N65SCT, DMG8N65SCT Datasheet (Total Pages: 7, Size: 450.77 KB)
PDFDMG8N65SCT Datasheet Cover
DMG8N65SCT Datasheet Page 2 DMG8N65SCT Datasheet Page 3 DMG8N65SCT Datasheet Page 4 DMG8N65SCT Datasheet Page 5 DMG8N65SCT Datasheet Page 6 DMG8N65SCT Datasheet Page 7

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DMG8N65SCT Specifications

ManufacturerDiodes Incorporated
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.3Ohm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1217pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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