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SISA40DN-T1-GE3

SISA40DN-T1-GE3

For Reference Only

Part Number SISA40DN-T1-GE3
PNEDA Part # SISA40DN-T1-GE3
Description MOSFET N-CH 20V PPAK 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,694
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISA40DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISA40DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISA40DN-T1-GE3, SISA40DN-T1-GE3 Datasheet (Total Pages: 9, Size: 241.62 KB)
PDFSISA40DN-T1-GE3 Datasheet Cover
SISA40DN-T1-GE3 Datasheet Page 2 SISA40DN-T1-GE3 Datasheet Page 3 SISA40DN-T1-GE3 Datasheet Page 4 SISA40DN-T1-GE3 Datasheet Page 5 SISA40DN-T1-GE3 Datasheet Page 6 SISA40DN-T1-GE3 Datasheet Page 7 SISA40DN-T1-GE3 Datasheet Page 8 SISA40DN-T1-GE3 Datasheet Page 9

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SISA40DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C43.7A (Ta), 162A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs1.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs53nC @ 10V
Vgs (Max)+12V, -8V
Input Capacitance (Ciss) (Max) @ Vds3415pF @ 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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