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IRFSL11N50APBF

IRFSL11N50APBF

For Reference Only

Part Number IRFSL11N50APBF
PNEDA Part # IRFSL11N50APBF
Description MOSFET N-CH 500V 11A TO-262
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 16,464
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFSL11N50APBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFSL11N50APBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFSL11N50APBF, IRFSL11N50APBF Datasheet (Total Pages: 10, Size: 340.99 KB)
PDFIRFSL11N50A Datasheet Cover
IRFSL11N50A Datasheet Page 2 IRFSL11N50A Datasheet Page 3 IRFSL11N50A Datasheet Page 4 IRFSL11N50A Datasheet Page 5 IRFSL11N50A Datasheet Page 6 IRFSL11N50A Datasheet Page 7 IRFSL11N50A Datasheet Page 8 IRFSL11N50A Datasheet Page 9 IRFSL11N50A Datasheet Page 10

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IRFSL11N50APBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs550mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs51nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1426pF @ 25V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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