Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BCR191WH6327XTSA1

BCR191WH6327XTSA1

For Reference Only

Part Number BCR191WH6327XTSA1
PNEDA Part # BCR191WH6327XTSA1
Description TRANS PREBIAS PNP 250MW SOT323-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,484
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BCR191WH6327XTSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBCR191WH6327XTSA1
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
BCR191WH6327XTSA1, BCR191WH6327XTSA1 Datasheet (Total Pages: 8, Size: 836.27 KB)
PDFBCR191WE6327HTSA1 Datasheet Cover
BCR191WE6327HTSA1 Datasheet Page 2 BCR191WE6327HTSA1 Datasheet Page 3 BCR191WE6327HTSA1 Datasheet Page 4 BCR191WE6327HTSA1 Datasheet Page 5 BCR191WE6327HTSA1 Datasheet Page 6 BCR191WE6327HTSA1 Datasheet Page 7 BCR191WE6327HTSA1 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BCR191WH6327XTSA1 Datasheet
  • where to find BCR191WH6327XTSA1
  • Infineon Technologies

  • Infineon Technologies BCR191WH6327XTSA1
  • BCR191WH6327XTSA1 PDF Datasheet
  • BCR191WH6327XTSA1 Stock

  • BCR191WH6327XTSA1 Pinout
  • Datasheet BCR191WH6327XTSA1
  • BCR191WH6327XTSA1 Supplier

  • Infineon Technologies Distributor
  • BCR191WH6327XTSA1 Price
  • BCR191WH6327XTSA1 Distributor

BCR191WH6327XTSA1 Specifications

ManufacturerInfineon Technologies
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)22 kOhms
Resistor - Emitter Base (R2)22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition200MHz
Power - Max250mW
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackagePG-SOT323-3

The Products You May Be Interested In

DDTC113ZUA-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

1 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

33 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

SOT-323

DDTC125TE-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

200 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 50µA, 500µA

Current - Collector Cutoff (Max)

500nA (ICBO)

Frequency - Transition

250MHz

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SOT-523

Supplier Device Package

SOT-523

DTC043XEBTL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

*

Transistor Type

-

Current - Collector (Ic) (Max)

-

Voltage - Collector Emitter Breakdown (Max)

-

Resistor - Base (R1)

-

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

-

Vce Saturation (Max) @ Ib, Ic

-

Current - Collector Cutoff (Max)

-

Frequency - Transition

-

Power - Max

-

Mounting Type

-

Package / Case

-

Supplier Device Package

-

RN2311(TE85L,F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

200MHz

Power - Max

100mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

USM

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

-

Vce Saturation (Max) @ Ib, Ic

-

Current - Collector Cutoff (Max)

-

Frequency - Transition

-

Power - Max

500mW

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

Recently Sold

8121-RC

8121-RC

Bourns

COMMON MODE CHOKE 1MH 20A 2LN TH

D2-24044-MR

D2-24044-MR

Renesas Electronics America Inc.

IC DGTL AMP AUDIO PWR D 38HTSSOP

1N4004GP-E3/54

1N4004GP-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

C5750X7S2A106K230KE

C5750X7S2A106K230KE

TDK

CAP CER 10UF 100V X7S 2220

MMSZ4696T1G

MMSZ4696T1G

ON Semiconductor

DIODE ZENER 9.1V 500MW SOD123

IHLP2525CZER3R3M01

IHLP2525CZER3R3M01

Vishay Dale

FIXED IND 3.3UH 6A 30 MOHM SMD

ULN2804A

ULN2804A

STMicroelectronics

TRANS 8NPN DARL 50V 0.5A 18DIP

NTJD4001NT1G

NTJD4001NT1G

ON Semiconductor

MOSFET 2N-CH 30V 0.25A SOT-363

TAJB106K016RNJ

TAJB106K016RNJ

CAP TANT 10UF 10% 16V 1411

CC12H2A-TR

CC12H2A-TR

Eaton - Electronics Division

FUSE BOARD MOUNT 2A 63VDC 1206

ADM1087AKSZ-REEL7

ADM1087AKSZ-REEL7

Analog Devices

IC SIMPLE SEQUENCER OD SC70-6

SL16010DCT

SL16010DCT

Silicon Labs

IC CLOCK AMD GRAPHICS 10TDFN