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BCR191WE6327HTSA1 Datasheet

BCR191WE6327HTSA1 Datasheet
Total Pages: 8
Size: 836.27 KB
Infineon Technologies
This datasheet covers 4 part numbers: BCR191WE6327HTSA1, BCR 191F E6327, BCR191WH6327XTSA1, BCR191E6327HTSA1
BCR191WE6327HTSA1 Datasheet Page 1
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BCR191WE6327HTSA1 Datasheet Page 8
BCR191WE6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

22 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

200MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

PG-SOT323-3

BCR 191F E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

22 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

200MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SOT-723

Supplier Device Package

PG-TSFP-3

BCR191WH6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

22 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

200MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

PG-SOT323-3

BCR191E6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

22 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

200MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3