AT-32011-TR1
For Reference Only
| Part Number | AT-32011-TR1 |
| PNEDA Part # | AT-32011-TR1 |
| Description | RF TRANS NPN 5.5V SOT143 |
| Manufacturer | Broadcom |
| Unit Price | Request a Quote |
| In Stock | 5,202 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 2 - Apr 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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AT-32011-TR1 Resources
| Brand | Broadcom |
| ECAD Module |
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| Mfr. Part Number | AT-32011-TR1 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
Payment Method
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- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- Orders cannot be canceled after shipping the packages.
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AT-32011-TR1 Specifications
| Manufacturer | Broadcom Limited |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 5.5V |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | 1dB ~ 1.3dB @ 900MHz |
| Gain | 12.5dB ~ 14dB |
| Power - Max | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2mA, 2.7V |
| Current - Collector (Ic) (Max) | 32mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-253-4, TO-253AA |
| Supplier Device Package | SOT-143 |
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Manufacturer Microsemi Corporation Series - Transistor Type - Voltage - Collector Emitter Breakdown (Max) - Frequency - Transition - Noise Figure (dB Typ @ f) - Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 25V Frequency - Transition 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f) - Gain 10.5dB Power - Max 175W DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA, 5V Current - Collector (Ic) (Max) 4A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case M220 Supplier Device Package M220 |
Manufacturer Microsemi Corporation Series - Transistor Type PNP Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition - Noise Figure (dB Typ @ f) 3.5dB @ 450MHz Gain 25dB Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 10V Current - Collector (Ic) (Max) 30mA Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Surface Mount Package / Case 3-SMD, No Lead Supplier Device Package UB |
